发明名称 Apparatus and methodology for controlling hot swap MOSFETs
摘要 Systems and methods for reliable and efficient hot swap control are disclosed herein. The system includes a feedback circuit that senses a load voltage and enables a gate driver, in response to a difference between input and output voltages falling below a predefined threshold value. Once enabled, the gate driver instantaneously, or almost instantaneously, turns on a set of paralleled metal-oxide-semiconductor field-effect transistors (MOSFETs) in a hot swap control circuit and/or enables a load. Since the MOSFETs are switched instantaneously, or almost instantaneously, they do not operate in a linear mode and thus reliable sharing of load current is achieved. In addition, on detecting an overcurrent condition, the gate driver is disabled, which in turn switches off the MOSFETs. Accordingly, both inrush current limiting and overcurrent protection can be provided.
申请公布号 US8278997(B1) 申请公布日期 2012.10.02
申请号 US201113251838 申请日期 2011.10.03
申请人 KIM SANGSUN;SHENG HONGGANG;GOOGLE INC. 发明人 KIM SANGSUN;SHENG HONGGANG
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
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