发明名称 |
Resistive random access memory devices and resistive random access memory arrays having the same |
摘要 |
A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices.
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申请公布号 |
US8278640(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100805783 |
申请日期 |
2010.08.19 |
申请人 |
LEE DONG-SOO;LEE CHANG-BUM;KIM CHANG-JUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG-SOO;LEE CHANG-BUM;KIM CHANG-JUNG |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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