| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer. |
| 申请公布号 |
US8278162(B2) |
申请公布日期 |
2012.10.02 |
| 申请号 |
US20100768205 |
申请日期 |
2010.04.27 |
| 申请人 |
AKIMOTO KENGO;KAWAE DAISUKE;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
AKIMOTO KENGO;KAWAE DAISUKE |
| 分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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