发明名称 Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
摘要 A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).
申请公布号 US8277671(B2) 申请公布日期 2012.10.02
申请号 US20070856810 申请日期 2007.09.18
申请人 EVERSON WILLIAM J.;SNYDER DAVID;GAMBLE RICHARD;HEYDEMANN VOLKER D.;THE PENN STATE RESEARCH FOUNDATION 发明人 EVERSON WILLIAM J.;SNYDER DAVID;GAMBLE RICHARD;HEYDEMANN VOLKER D.
分类号 B44C1/22;C03C15/00;H01L21/302;H01L21/461 主分类号 B44C1/22
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