发明名称 |
Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers |
摘要 |
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7). |
申请公布号 |
US8277671(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20070856810 |
申请日期 |
2007.09.18 |
申请人 |
EVERSON WILLIAM J.;SNYDER DAVID;GAMBLE RICHARD;HEYDEMANN VOLKER D.;THE PENN STATE RESEARCH FOUNDATION |
发明人 |
EVERSON WILLIAM J.;SNYDER DAVID;GAMBLE RICHARD;HEYDEMANN VOLKER D. |
分类号 |
B44C1/22;C03C15/00;H01L21/302;H01L21/461 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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