PURPOSE: A memory system and an addressing method of the memory system are provided to equalize a bit error rate between word lines of a nonvolatile memory device. CONSTITUTION: A nonvolatile memory device(100) includes a memory cell array(110). A memory controller(400) controls the nonvolatile memory device. An operation memory device(420) temporarily stores data programmed in the nonvolatile memory device. An interleaving unit(410) reconstructs the data stored in the operation memory device.