发明名称 MEMORY SYSTEM AND ADDRESSING METHOD THEREOF
摘要 PURPOSE: A memory system and an addressing method of the memory system are provided to equalize a bit error rate between word lines of a nonvolatile memory device. CONSTITUTION: A nonvolatile memory device(100) includes a memory cell array(110). A memory controller(400) controls the nonvolatile memory device. An operation memory device(420) temporarily stores data programmed in the nonvolatile memory device. An interleaving unit(410) reconstructs the data stored in the operation memory device.
申请公布号 KR20120107336(A) 申请公布日期 2012.10.02
申请号 KR20110024968 申请日期 2011.03.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, KYOUNG LAE;SON, HONG RAK;OH, EUN CHU
分类号 G06F12/02;G06F13/16 主分类号 G06F12/02
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