发明名称 Material for forming resist protection films and method for resist pattern formation with the same
摘要 The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.
申请公布号 US8278025(B2) 申请公布日期 2012.10.02
申请号 US20050722797 申请日期 2005.12.22
申请人 ISHIDUKA KEITA;ENDO KOTARO;TOKYO OHKA KOGYO CO., LTD. 发明人 ISHIDUKA KEITA;ENDO KOTARO
分类号 G03F7/004;G03F7/30 主分类号 G03F7/004
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