发明名称 |
Material for forming resist protection films and method for resist pattern formation with the same |
摘要 |
The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester. |
申请公布号 |
US8278025(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20050722797 |
申请日期 |
2005.12.22 |
申请人 |
ISHIDUKA KEITA;ENDO KOTARO;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
ISHIDUKA KEITA;ENDO KOTARO |
分类号 |
G03F7/004;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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