| 摘要 |
A semiconductor device is provided that includes a semiconductor substrate, a plurality of dies formed on the semiconductor substrate, the plurality of dies being separated from one another by a first region extending along a first direction and a second region extending along a second direction different from the first direction, a dummy metal structure formed within a third region that includes a region defined by an intersection of the first region and the second region, a plurality of metal interconnection layers formed over the substrate, and a plurality of dielectric layers formed over the substrate. Each of the metal interconnection layers is disposed within each of the dielectric layers and a dielectric constant of at least one of the dielectric layers is less than about 2.6. |
