发明名称 |
Chemical vapor deposition apparatus |
摘要 |
A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized. |
申请公布号 |
US8277893(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20090497428 |
申请日期 |
2009.07.02 |
申请人 |
OHORI TATSUYA;SHIINA KAZUSHIGE;IYECHIKA YASUSHI;SUDA NOBORU;TAKAMATSU YUKICHI;ISHIHAMA YOSHIYASU;YONEYAMA TAKEO;KOMIYA YOSHINAO;JAPAN PIONICS CO., LTD. |
发明人 |
OHORI TATSUYA;SHIINA KAZUSHIGE;IYECHIKA YASUSHI;SUDA NOBORU;TAKAMATSU YUKICHI;ISHIHAMA YOSHIYASU;YONEYAMA TAKEO;KOMIYA YOSHINAO |
分类号 |
C23C16/06 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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