| 摘要 |
A COMPOSITION AND METHOD FOR REMOVING RESIDUES SUCH AS, WITHOUT LIMITATION, POST ETCHED AND/OR POST ASHED PHOTORESIST, PLASMA ETCHING, ASHING, AND MIXTURES THEREOF FROM A SUBSTRATE IS DESCRIBED HEREIN. IN ONE ASPECT, THERE IS PROVIDED A METHOD FOR REMOVING RESIDUES FROM A SUBSTRATE COMPRISING: CONTACTING THE SUBSTRATE WITH A COMPOSITION COMPRISING: WATER; A QUATERNARY AMMONIUM HYDROXIDE COMPOUND; A FLUORIDE CONTAINING COMPOUND; AND OPTIONALLY A CORROSION INHIBITOR WHEREIN THE COMPOSITION IS FREE OF AN ADDED ORGANIC SOLVENT AND WHEREIN THE COMPOSITION HAS A PH GREATER THAN 9. |
