| 摘要 |
An active matrix substrate (20a) includes a gate electrode (11aa), a gate insulating layer (12) covering the gate electrode (11aa), an oxide semiconductor layer (13a) provided on the gate insulating layer (12) and having a channel region (C), a source electrode (16aa) and a drain electrode (16b) provided on the oxide semiconductor layer (13a), an interlayer insulating film (17) covering the oxide semiconductor layer (13a), the source electrode (16aa), and the drain electrode (16b), and a planarization film (18) provided on the interlayer insulating film (17). An opening (Ca) reaching the interlayer insulating film (17) is formed at a portion of the planarization film (18) which is located over the channel region (C). |
