发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING RESISTIVE ELEMENT
摘要 According to one embodiment, a second conductive layer is provided on a second insulating film and connected to a first conductive layer via an opening portion in the second insulating film. A first contact is connected to the second conductive layer. A third conductive layer is provided on the second insulating film and connected to the first conductive layer via an opening portion in the second insulating film. A second contact is connected to the third conductive layer. A fourth conductive layer is provided on the second insulating film and connected to the first conductive layer via an opening portion in the second insulating film. A third contact is connected to the fourth conductive layer. The floating gate layer and the first conductive layer are made of the same material, and the control gate layer, the second, third and fourth conductive layers are made of the same material.
申请公布号 US2012241835(A1) 申请公布日期 2012.09.27
申请号 US201113235411 申请日期 2011.09.18
申请人 SUGAWARA MASATO 发明人 SUGAWARA MASATO
分类号 H01L29/788 主分类号 H01L29/788
代理机构 代理人
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