METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE
摘要
<p>The purpose of the present invention is to provide a method for manufacturing a variable resistance nonvolatile storage device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper wiring and which enables larger capacity and higher integration. This method for manufacturing a nonvolatile storage device comprises: a step wherein a variable resistance element, a contact hole (106) and a wiring groove (108a) are formed; and a step wherein an electric current control layer (111) of a bidirectional diode element is formed on interlayer insulating layers (102, 112) and a variable resistance layer (104) so that the wiring groove (108a) is covered but the bottom surface of the contact hole (106) is not covered.</p>
