发明名称 |
SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING OVERLAPPING DOPED REGIONS AND METHODS OF FABRICATING SAME |
摘要 |
<p>A semiconductor device includes a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined, and a plurality of spaced apart doped regions within the active region. The plurality of doped regions have a second conductivity type that is opposite the first conductivity type and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of doped regions include a plurality of rows extending in a longitudinal direction. Each of the rows includes a plurality of longitudinally extending segments, and the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction.</p> |
申请公布号 |
WO2012128934(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
WO2012US27874 |
申请日期 |
2012.03.06 |
申请人 |
CREE, INC.;ZHANG, QINGCHUN;HENNING, JASON |
发明人 |
ZHANG, QINGCHUN;HENNING, JASON |
分类号 |
H01L21/28;H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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