SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND TRANSISTOR

摘要

To provide a deposition technique for forming an oxide semiconductor film. An oxide semiconductor film is formed using a sputtering target which contains a sintered body of metal oxide and in which the concentration of hydrogen contained in the sintered body of metal oxide is, for example, as low as 1×1016 atoms/cm3 or lower, so that the oxide semiconductor film contains a small amount of impurities such as a hydrogen atom and a compound containing a hydrogen atom typified by H2O. Further, this oxide semiconductor film is used as an active layer of a transistor.