发明名称 |
WAFER-PROCESSING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING WAFER-PROCESSING FILM |
摘要 |
<p>WAFER-PROCESSING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING WAFER-PROCESSING FILM 5 A wafer-processing film capable of sufficientlysuppressing generation of transfer traces in an adhesive-agent layer when a wafer-processing film having a dicing/die-bonding film composed of the adhesive-agent layer and a bonding film is wound like a roll is provided. 10 A wafer-processing film of the present invention has: a bonding film composed of a base material film and a bonding-agent layer provided on the base material film; and an adhesive-agent layer provided on the bonding-agent layer; wherein the bonding-agent layer contains a radiation15 polymerizable compound and a first photo initiator in a part corresponding to at least a ring frame and contains the radiation polymerizable compound and a second photo initiator in a part other than a location containing the first photo initiator; and the wavelength of light reactable20 with the first photo initiator is different from thewavelength of light reactable with the second photo initiator.Figure 1</p> |
申请公布号 |
SG183334(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
SG20120060596 |
申请日期 |
2010.03.09 |
申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
TATEBE, KAZUKI |
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