发明名称 |
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES INCLUDING METAL SILICIDE |
摘要 |
Embodiments of methods for fabricating the semiconductor devices are provided. The method includes forming a metal silicide in an upper portion of a gate electrode structure and in an active semiconductor region laterally adjacent to the gate electrode structure. A first portion of the metal silicide formed in the upper portion of the gate electrode structure is removed.
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申请公布号 |
US2012244700(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113069062 |
申请日期 |
2011.03.22 |
申请人 |
RICHTER RALF RR;PFUTZNER RONNY RP;GLOBALFOUNDRIES INC. |
发明人 |
RICHTER RALF RR;PFUTZNER RONNY RP |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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