发明名称 |
ION IMPLANTED RESIST STRIP WITH SUPERACID |
摘要 |
According to certain embodiments, a resist is placed over the surface of a semiconductor structure, wherein the resist covers a portion of the semiconductor structure. Dopants are implanted into the semiconductor structure using an ion implantation beam in regions of the semiconductor structure not covered by the resist. Due to exposure to the ion implantation beam, at least a portion of the resist is converted by exposure to the ion beam to contain an inorganic carbonized material. The semiconductor structure with resist is contacted with a superacid composition containing a superacid species to remove the resist containing inorganic carbonized materials from the semiconductor structure.
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申请公布号 |
US2012244690(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113069625 |
申请日期 |
2011.03.23 |
申请人 |
UOZUMI YOSHIHIRO;TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. |
发明人 |
UOZUMI YOSHIHIRO |
分类号 |
H01L21/426;B08B13/00;C01B17/46;C07C309/06;C07F5/02;C23F1/08;G03F7/42 |
主分类号 |
H01L21/426 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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