| 摘要 |
<p>The arrangement (1) has titanium oxide layer (3) formed on first conductive layer (2). A metal layer (4) is formed on titanium oxide layer. The electron work function of first conductive layer is lower than electron work function of titanium oxide layer, such that an ohmic contact is formed between first conductive layer and titanium oxide layer, a Schottky contact is formed between titanium oxide layer and metal layer. The sponge-like porous structure and corresponding porous structure are formed on titanium oxide layer and metal layer, respectively. Independent claims are included for the following: (1) hydrogen sensor; and (2) manufacturing method of manufacturing thin film diode arrangement.</p> |
