A method of producing a multilayer barrier structure

摘要

Abstract The present invention provides a method of producing a multilayer barrier structure for a solid oxide cell stack, comprising the steps of: 5 - providing a metal interconnect, wherein the metal interconnect is a ferritic stainless steel layer; - applying a first metal oxide layer on said metal interconnect; - applying a second metal oxide layer on top of said first metal oxide layer; wherein said second metal oxide layer comprises a mixture of metal oxides 10 having at least two different metal cations, or a mixture of metal oxides having at least two different metal cations and a transition metal oxide; and - reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, 15 and a solid oxide stack comprising an anode contact layer and support structure, an an ode layer, an electrolyte layer, a cathode layer, a cathode contact layer, a metallic inter connect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmos phere composition and current load, which depends on the layer composition facilitating 20 the formation of the desired reaction products as a dense barrier layer without chromium species migrating to the air-electrode.