| 摘要 |
<p>Semiconductor devices including a plurality of thyristor-based memory cells, each having a cell size of 4F2, and methods for forming the same are provided. The thyristor-based memory cells each include a thyristor having vertically superposed regions of alternating dopant types, and a control gate. The control gate may be electrically coupled with one or more of the thyristors and may be operably coupled to a voltage source. The thyristor-based memory cells may be formed in an array on a conductive strap, which may function as a cathode or a data line. A system may be formed by integrating the semiconductor devices with one or more memory access devices or conventional logic devices, such as a complementary metal-oxide-semiconductor (CMOS) device.</p> |
