| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving protective circuit for a power semiconductor device capable of limiting a voltage of a control electrode of the power semiconductor device at a short circuit operation to a value equal to a voltage at a normal operation, and performing a safe and sure cutoff. <P>SOLUTION: The driving protective circuit for the power semiconductor device comprises a power semiconductor device F1; a driving circuit for driving its control electrode; and a voltage protective circuit for limiting a voltage Vge of the control electrode of the power semiconductor device F1 so as not to exceed a constant value. The voltage protective circuit comprises a gate discharging transistor Tr1 in which its emitter is connected to the control electrode of the power semiconductor device F1; and a voltage generation circuit B1 for providing a base potential to the gate discharging transistor Tr1. When a voltage exceeding a voltage drop ΔV1 in the drive circuit is applied to the control electrode of the power semiconductor device F1 from a drive positive power supply voltage VDD of the power semiconductor device F1, the voltage generation circuit B1 outputs a voltage at which the gate discharging transistor Tr1 is turned on. <P>COPYRIGHT: (C)2012,JPO&INPIT |
