| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device for etching a surface of a semiconductor substrate adaptable to mass production though using gases of ClF<SB POS="POST">3</SB>, XeF<SB POS="POST">2</SB>, BrF<SB POS="POST">3</SB>and BrF<SB POS="POST">5</SB>. <P>SOLUTION: A semiconductor device surface etching device comprises: a reaction chamber capable of being decompressed to less than an atmospheric pressure; a transfer stage movable in the reaction chamber for loading a semiconductor substrate; a nozzle injecting an etching gas containing one and more gases selected from a group consisting of ClF<SB POS="POST">3</SB>, XeF<SB POS="POST">2</SB>, BrF<SB POS="POST">3</SB>and BrF<SB POS="POST">5</SB>toward a surface of the semiconductor substrate loaded on the transfer stage; and a nozzle injecting a cooling gas containing a nitrogen gas or an inert gas toward the semiconductor substrate loaded on the transfer stage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
