发明名称 SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD USING SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a thin film transistor formed on a glass substrate is broken because the glass substrate for a liquid crystal display element is easy to be charged, and an ion reduces at re-coupling if polarity of the ion changes quickly and unevenness occurs with the ion if the change is made slowly although a technology for static elimination by blowing ionized gas against the glass substrate is known conventionally. <P>SOLUTION: The substrate processing apparatus includes a lift pin which is present in a stage to lift up a substrate, an ionizer for temporal switching of ion polarity that is generated, a frequency control part for changing frequency at which polarity of the ion is switched, and a lift-up control part which transmits a signal to the frequency control part, for controlling lifting operation of the lift pin. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012186429(A) 申请公布日期 2012.09.27
申请号 JP20110050335 申请日期 2011.03.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 OISHI TAKAYUKI
分类号 H01L21/683 主分类号 H01L21/683
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