| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the load of a drain power source of a reset transistor and reduce the layout area in a configuration in which the drain power source of the reset transistor and a drain power source of an amplification transistor are separately provided. <P>SOLUTION: There is provided a solid-state imaging device comprising: a cell UC1 in which two pixels are provided; an amplification transistor Tb shared by the two pixels and configured to amplify a signal read from the pixels; a reset transistor Tc shared by the two pixels and configured to reset the signal read from the pixels; and a row scanning circuit 1 configured to drive a drain of the reset transistor Tc separately according to different lines. A drain diffusion layer portion of the reset transistor and a drain diffusion layer portion of the amplification transistor are shared between different adjacent cells which share the pixels. <P>COPYRIGHT: (C)2012,JPO&INPIT |
