FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This method for producing a flexible semiconductor device is characterized by comprising: (i) a step for forming an insulating layer on one of the main surfaces of a metal foil; (ii) a step for forming a semiconductor layer on the insulating layer, and for forming a source electrode and a drain electrode in so as to come into contact with the semiconductor layer; (iii) a step for forming a flexible film layer in such a manner as to cover the semiconductor layer, the source electrode and the drain electrode; (iv) a step for forming vias in the flexible film layer, thereby obtaining a semiconductor device precursor; and (v) a step for processing the metal foil to form a gate electrode from the metal foil. This method for producing a flexible semiconductor device is further characterized in that, when the metal foil is processed in step (v), a gate electrode is formed in a prescribed position by using at least one of the vias of the semiconductor device precursor as a positioning marker.