RESISTIVE MEMORY DEVICE AND METHOD FOR WRITING TO SAME

摘要

A method for writing to a resistive memory device having a plurality of resistive memory elements, in which a first process and a second process are performed in the stated order in a writing process in which a first variable resistor changes from a low resistance to a high resistance, the first process adapted for selecting one or a plurality of resistive memory elements and applying, over a first writing time, a first writing voltage between a first writing terminal and a second writing terminal; and the second process adapted for selecting a plurality of resistive memory elements and applying, over a second writing time, a second writing voltage between the first writing terminal and the second writing terminal. The number of elements selected in the second process is greater than the number of elements selected in the first process, and the second writing time is longer than the first writing time.