SILICON CARBIDE SUBSTRATE

摘要

A silicon carbide substrate (1) comprises a base substrate (10) having a diameter of 70 mm or more and single crystal silicon carbide, and is provided with a plurality of SiC substrates (20) arranged side by side on the base substrate (10) in a plan view. That is, the plurality of SiC substrates (20) are arranged side by side along a main surface of the base substrate (10). A main surface (20A) of the SiC substrates (20) on the opposite side of the base substrate (10) has an off-angle of 20° or less with respect to a surface {0001}.