发明名称 THERMOELECTRIC CONVERSION MODULE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a high performance thermoelectric conversion element in which Nb doped strontium titanate (STO) is used without forming a multiple quantum well structure. <P>SOLUTION: A strontium titanate growth substrate is heated in a vacuum vessel, and an inert gas is introduced into the vacuum vessel. By using strontium titanate doped with n-type impurities as a target, a strontium titanate thin film having oxygen composition smaller than a stoichiometry composition and added with n-type impurities is formed on the strontium titanate growth substrate by laser ablation. An electrode layer is formed on the thin film and patterned, followed by patterning of the thin film. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012186297(A) 申请公布日期 2012.09.27
申请号 JP20110048028 申请日期 2011.03.04
申请人 FUJITSU LTD 发明人 ISHII MASATOSHI;BANIECKI JOHN
分类号 H01L35/32;H01L35/22;H01L35/30;H02N11/00 主分类号 H01L35/32
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