| 摘要 |
The invention relates to a vertical Hall sensor integrated in a semiconductor chip and a method for the production thereof. The vertical Hall sensor has an electrically conductive well of a first conductivity type, which is embedded in an electrically conductive region of a second conductivity type. The electrical contacts are arranged along a straight line on a planar surface of the electrically conductive well. The electrically conductive well is generated by means of high-energy ion implantation and subsequent heating, so that it has a doping profile which either has a maximum which is located at a depth T1 from the planar surface of the electrically conductive well, or is essentially constant up to a depth T2.
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