EDGE ROUNDED FIELD EFFECT TRANSISTORS AND METHODS OF MANUFACTURING

摘要

Embodiments of the present technology are directed toward gate sidcwall engineering of field effect transistors. The techniques include formation of a blocking dielectric region and nitridation of a surface thereof. After nitridation of the blocking dielectric region, a gate region is formed thereon and the sidewails of the gate region are oxidized to round off gate sharp corners and reduce the electrical field at the gate comers.