发明名称 |
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY |
摘要 |
A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer. |
申请公布号 |
US2012241827(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113210678 |
申请日期 |
2011.08.16 |
申请人 |
DAIBOU TADAOMI;AMANO MINORU;SAIDA DAISUKE;ITO JUNICHI;OHSAWA YUICHI;KAMATA CHIKAYOSHI;KASHIWADA SAORI;YODA HIROAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
DAIBOU TADAOMI;AMANO MINORU;SAIDA DAISUKE;ITO JUNICHI;OHSAWA YUICHI;KAMATA CHIKAYOSHI;KASHIWADA SAORI;YODA HIROAKI |
分类号 |
H01L27/22;H01L43/02;H01L43/10 |
主分类号 |
H01L27/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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