| 发明名称 |
AMBIENT TEMPERATURE METAL DIRECT BONDING |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To bond wafers to each other at a low temperature or an ambient temperature without using external pressure. <P>SOLUTION: This invention relates to a bonded device structure, and the bonded device structure includes: a first substrate having a first pair of metal bonding pads connecting with a device or a circuit and a first nonmetallic region located adjacent to the metal bonding pads on the first substrate 10; a second substrate having a second pair of metal bonding pads located adjacent to the first pair of metal bonding pads connecting with the device or the circuit and a second nonmetallic region located adjacent to the metal bonding pads on the second substrate 13; and a contact bonded boundary surface between the first and second pairs of metal bonding pads which is formed by contact-bonding the first nonmetallic region to the second nonmetallic region. At least one of the first and second substrates may be elastically deformed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012186481(A) |
申请公布日期 |
2012.09.27 |
| 申请号 |
JP20120090162 |
申请日期 |
2012.04.11 |
| 申请人 |
ZIPTRONIX INC |
发明人 |
TONG QIN-YI;PAUL M ENGQUIST;ANTHONY SCOT ROSE |
| 分类号 |
H01L21/02;H01L21/3205;H01L21/60;H01L21/768;H01L21/98;H01L23/522 |
主分类号 |
H01L21/02 |
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