SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can achieve high performance and high reliability by an inexpensive process, and to provide a method of manufacturing the same.

SOLUTION: A semiconductor device comprises a first transistor and a second transistor. The first transistor includes: a first impurity layer of a first conductivity type formed in a first region; a first epitaxial semiconductor layer formed on the first impurity layer; a first gate electrode formed on the first epitaxial semiconductor layer via a first gate insulating film; and a first source/drain region formed in the first region. The second transistor includes: a second impurity layer of a second conductivity type formed in a second region; a second epitaxial semiconductor layer that is formed on the second impurity layer and has a different thickness from the first epitaxial semiconductor layer; a second gate electrode formed on the second epitaxial semiconductor layer via a second gate insulating film having the same film thickness as the first gate insulating film; and a second source/drain region formed in the second region.

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