| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a reliable semiconductor memory device in which a burden on a variable resistive element is reduced, and a method for rewriting of memory cell. <P>SOLUTION: When conducting rewriting (set operation) for shifting a resistance state of a variable resistive element from a high resistance state to a low resistance state, a discharge current applied to the variable resistive element as part of set current is reduced by connecting a parallel resistance circuit 121 so as to be in parallel with a series circuit of a variable resistive element 105 and a cell transistor 106, and by discharging at least part of electric charge, which is stored in parasitic capacitance of the variable resistive element in association with application of set voltage, through the parallel resistance circuit. This reduces the set current and prevents a resistance value of the variable resistive element from becoming too low. <P>COPYRIGHT: (C)2012,JPO&INPIT |
