发明名称 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
摘要 A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
申请公布号 US2012244697(A1) 申请公布日期 2012.09.27
申请号 US201213493590 申请日期 2012.06.11
申请人 OKUMURA KATSUYA;TAKAHASHI YOSHIKAZU;TAKENOUCHI KAZUNORI;OCTEC, INC.;KYOCERA CORPORATION;FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. 发明人 OKUMURA KATSUYA;TAKAHASHI YOSHIKAZU;TAKENOUCHI KAZUNORI
分类号 H01L21/768 主分类号 H01L21/768
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