| 发明名称 |
Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum |
| 摘要 |
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| 申请公布号 |
AU2008344685(B2) |
申请公布日期 |
2012.09.27 |
| 申请号 |
AU20080344685 |
申请日期 |
2008.10.31 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
SHINDO, YUICHIRO;KANOU, GAKU;TAKAHATA, MASAHIRO |
| 分类号 |
C22B9/22;C22B59/00;C22C28/00;C23C14/34;H01L21/283;H01L21/285;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
C22B9/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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