| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor with a chip size package capable of being manufactured with ease. <P>SOLUTION: Element formation regions corresponding to a plurality of pixel regions are formed on a semiconductor substrate (21) of a light receiving element layer (20). Semiconductor light receiving elements (PD) are formed in these element formation regions and covered with light transmissive insulating films (25a), (25b), and (26). A light introduction layer (40) having a light introduction cavity (42) incorporating a plurality of microlenses (43), and a quartz cap (51) closing the cavity is formed on the insulating film (26). An output electric signal of the semiconductor light receiving element (PD) is extracted to a bottom surface of the semiconductor substrate (21) via an embedded wire of the semiconductor substrate (21), and extracted outside the solid-state image sensor via an output layer (10) or an interposer (10A). <P>COPYRIGHT: (C)2012,JPO&INPIT |
