| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a susceptor, along with a method of manufacturing an epitaxial wafer using the susceptor, capable of suppressing occurrence of deposition on the rear surface of a substrate by lowering the temperature at a position corresponding to an upper stage counter sunk part on the rear surface side of the susceptor, at the outer peripheral part of a semiconductor substrate, to keep a thermal condition at the outer peripheral part and the inner peripheral part on the rear surface of the substrate constant. <P>SOLUTION: The susceptor supports a semiconductor substrate at the time of vapor phase growth of an epitaxial layer. On the upper surface of the susceptor, a counter sunk in which the semiconductor substrate is arranged is formed. The counter sunk has a two-stage structure containing an upper stage counter sunk part which supports the outer peripheral edge of the semiconductor substrate and a lower stage counter sunk part which is formed on the stage lower than the upper stage counter sunk part, at a central side. A through hole that penetrates down to the rear surface of the susceptor and is open state at the time of vapor phase growth is formed at the lower stage counter sunk part. On the rear surface side of the susceptor, a groove is provided at the position corresponding to the upper stage counter sunk part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
