| 摘要 |
A method and system are provided for manufacturing a base substrate that is used in manufacturing semi-conductor on insulator type substrate. The base substrate may be manufactured by providing a silicon substrate having an electrical resistivity above 500 Ohm·cm; cleaning the silicon substrate so as to remove native oxide and dopants from a surface thereof; forming, on the silicon substrate, a layer of dielectric material; and forming, on the layer of dielectric material, a layer of poly-crystalline silicon. These actions are implemented successively in an enclosure.
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