发明名称 |
FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM |
摘要 |
A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.
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申请公布号 |
US2012244721(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201213429742 |
申请日期 |
2012.03.26 |
申请人 |
MOROZUMI YUICHIRO;SUGAWARA TAKUYA;AKIYAMA KOJI;HISHIYA SHINGO;HIROTA TOSHIYUKI;KIYOMURA TAKAKAZU;TOKYO ELECTRON LIMITED;ELPIDA MEMORY INC. |
发明人 |
MOROZUMI YUICHIRO;SUGAWARA TAKUYA;AKIYAMA KOJI;HISHIYA SHINGO;HIROTA TOSHIYUKI;KIYOMURA TAKAKAZU |
分类号 |
H01L21/31;C23C16/455;C23C16/52 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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