发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES |
摘要 |
A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer.
|
申请公布号 |
US2012244670(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201213423748 |
申请日期 |
2012.03.19 |
申请人 |
DO JINHO;LIM HAJIN;KIM WEONHONG;HONG KYUNGIL;SONG MOONKYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
DO JINHO;LIM HAJIN;KIM WEONHONG;HONG KYUNGIL;SONG MOONKYUN |
分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|