| 摘要 |
In order to improve the power durability of an electrode formed upon a piezoelectric film, a piezoelectric device and manufacturing method for the piezoelectric device are provided which are capable of greatly reducing the concentration of an etching solution and etching time. Of a +C-plane (22) of a +Z-axis-side of a piezoelectric film (20) and a -C-plane (12) of a -Z-axis-side of the piezoelectric film (20), the -C-plane (12) of the -Z-axis-side of the piezoelectric film (20) is etched. As a result, a -Z-plane (21), which can be epitaxially grown, of the piezoelectric film (20) is exposed. Then, Ti is epitaxially grown toward the -Z-axis direction upon the -Z-plane (21) of the piezoelectric film (20) so that the crystalline growth plane of the same is parallel to the -Z-plane (21) of the piezoelectric film (20). Next, Al is epitaxially grown toward the -Z-axis direction upon the surface of a Ti electrode (65) so that the crystalline growth plane of the same is parallel to the -Z-plane (21) of the piezoelectric film (20). |
