| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems of an increase in a chip area due to a driver for writing data and an increase in data rewriting time due to serial execution of data 0 writing and data 1 writing. <P>SOLUTION: In a semiconductor memory, a resistance change type memory cell with a resistance value changed by the application of voltage is connected to a bit line BL1 and a source line SL1, and switching elements S1-S4 are provided which can switch connection between a bit line driver BD1, and the bit line BL1 and source line SL1 and control the switch for each bit. <P>COPYRIGHT: (C)2012,JPO&INPIT |
