| 摘要 |
This magnetic memory is provided with a foundation layer, a free magnetization layer, barrier layer, and reference magnetization layer. The free magnetization layer is provided so as to cover the foundation layer, has reversible magnetization, and is substantially uniformly magnetized. The barrier layer is provided so as to cover the free magnetization layer and is formed from a material that differs from the material for the foundation layer. The reference magnetization layer is provided on the barrier layer and has fixed magnetization. When the magnetization of the free magnetization layer is reversed, a first write current flows from one end of the free magnetization layer in a direction within the surface thereof to the other end without the intermediary of the reference magnetization layer. |
