发明名称 SEMICONDUCTURE STRUCTURE AND METHOD OF FORMING THE SEMICONDUCTOR STRUCTURE THAT PROVIDES TWO INDIVIDUAL RESISTORS OR A CAPACITOR
摘要 A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow.
申请公布号 US2012244676(A1) 申请公布日期 2012.09.27
申请号 US201213486149 申请日期 2012.06.01
申请人 KLATT JEFFREY;TEXAS INSTRUMENTS INCORPORATED 发明人 KLATT JEFFREY
分类号 H01L21/02 主分类号 H01L21/02
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