发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ADJUSTING APPARATUS |
摘要 |
According to embodiments, there is provided a manufacturing method of a semiconductor device includes forming a semiconductor thin film on a substrate; processing the thin film to a predetermined shape; executing an ion implantation process on the thin film processed to the predetermined shape; executing an anneal treatment on the thin film on which the ion implantation process has been executed to create a resistor element; and adjusting both or any one of a process condition of the ion implantation process and a treatment condition of the anneal treatment based on at least any one of a film forming condition and a film formation result of the forming and a film process result of the processing. |
申请公布号 |
US2012244646(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201213352611 |
申请日期 |
2012.01.18 |
申请人 |
KYUHO TAKASHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KYUHO TAKASHI |
分类号 |
H01L21/205;C23C14/48;C23C14/54;H01L21/306;H01L21/66 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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