发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ADJUSTING APPARATUS
摘要 According to embodiments, there is provided a manufacturing method of a semiconductor device includes forming a semiconductor thin film on a substrate; processing the thin film to a predetermined shape; executing an ion implantation process on the thin film processed to the predetermined shape; executing an anneal treatment on the thin film on which the ion implantation process has been executed to create a resistor element; and adjusting both or any one of a process condition of the ion implantation process and a treatment condition of the anneal treatment based on at least any one of a film forming condition and a film formation result of the forming and a film process result of the processing.
申请公布号 US2012244646(A1) 申请公布日期 2012.09.27
申请号 US201213352611 申请日期 2012.01.18
申请人 KYUHO TAKASHI;KABUSHIKI KAISHA TOSHIBA 发明人 KYUHO TAKASHI
分类号 H01L21/205;C23C14/48;C23C14/54;H01L21/306;H01L21/66 主分类号 H01L21/205
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