| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which high-quality crystals are formed on a substrate formed of silicon, for example. <P>SOLUTION: According to an embodiment, there is provided a semiconductor device comprising: an underground layer containing GaN, a function part including a nitride semiconductor, and an intermediate layer provided between the underground layer and the function part and including a layer containing AlN. A concentration of silicon atoms in a first region, which is included in the underground layer on a side opposite to the intermediate layer, is higher than a concentration of silicon atoms in a second region, which is included in the underground layer on a side opposite to the intermediate layer. A first surface, which is included in the ground layer on a side opposite to the intermediate layer, includes a plurality of concave portions. <P>COPYRIGHT: (C)2012,JPO&INPIT |
