发明名称 HIGH FREQUENCY TRANSISTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To cut down package cost and reduce a wire-induced inductance component. <P>SOLUTION: A high frequency transistor device 100 comprises an input side transmission line board 102, a distributor board 103, an input side matching circuit board 104, a high frequency transistor chip board 105, an output side matching circuit board 106, a coupler board 107 and an output side transmission line board 108, all of which are mounted on a flat base 101. The boards mounted on the base 101 increase in height stepwise from the high frequency transistor chip board 105 toward the input side transmission line board 102 and toward the output side transmission line board 108. The boards mounted on the base 101 are first bonded 121 beginning with a board lower in height than the other between adjacent boards and second bonded 122 on a higher board side, in which way they are electrically connected. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012186346(A) 申请公布日期 2012.09.27
申请号 JP20110048977 申请日期 2011.03.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 NONOMURA HIROYUKI
分类号 H01L23/12;H01L25/04;H01L25/18 主分类号 H01L23/12
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