发明名称 |
Ultra-High Voltage N-Type-Metal-Oxide-Semiconductor (UHV NMOS) Device and Methods of Manufacturing the same |
摘要 |
An ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device with improved performance and methods of manufacturing the same are provided. The UHV NMOS includes a substrate of P-type material; a first high-voltage N-well (HVNW) region disposed in a portion of the substrate; a source and bulk p-well (PW) adjacent to one side of the first HVNW region, and the source and bulk PW comprising a source and a bulk; a gate extended from the source and bulk PW to a portion of the first HVNW region, and a drain disposed within another portion of the first HVNW region that is opposite to the gate; a P-Top layer disposed within the first HVNW region, the P-Top layer positioned between the drain and the source and bulk PW; and an n-type implant layer formed on the P-Top layer.
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申请公布号 |
US2012241861(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113070819 |
申请日期 |
2011.03.24 |
申请人 |
CHEN CHIEH-CHIH;LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHIEH-CHIH;LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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