发明名称 |
SPECIFIC CONTACT RESISTIVITY MEASUREMENT METHOD, SEMICONDUCTOR DEVICE FOR SPECIFIC CONTACT RESISTIVITY MEASUREMENT, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A test structure, a method of employing the test structure, and a method of manufacturing the test structure are provided for measuring a contact resistance between a silicide and a semiconductor. The test structure includes a set of silicide layers separated from one another and upon which electrodes from a set of electrodes are placed. One pair of electrodes is employed to force a constant current through the silicide layers and a diffusion layer of a semiconductor substrate of the test structure. Another pair of electrodes determines a potential drop between the silicide layers and the diffusion layer. Based upon the constant current and the potential drop determined, a contact resistance is extracted.
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申请公布号 |
US2012242356(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113070704 |
申请日期 |
2011.03.24 |
申请人 |
OHUCHI KAZUYA;KUSUNOKI NAOKI;TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. |
发明人 |
OHUCHI KAZUYA;KUSUNOKI NAOKI |
分类号 |
G01R27/08;H01L21/28;H01L29/40 |
主分类号 |
G01R27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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